Pseudo Square Wafers
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Monocrystalline Silicon Solar Wafers:

Technical Specification:
Physical Characteristics :- Sizes:
- 125mm sq.
- 156mm sq.
- 165mm sq.
- Material: Multi Crystalline Silicon
- Technique of Ingot Formation: Casting by Heat Exchange Method
- Type: P Type due to Boron
- Resistivity: 0.5 to 5.0 Ohm-cm
- Wafering Technique: Wire Sawing
- Wafer Shape: Square
- Wafer Size: 125± 0.5mm x 125± 0.5 mm
- Wafer Corners: Shamffered
- Wafer Thickness: 325± 25 microns
- TTV: £ 40 microns
- BOW: £ 80 microns
- Wafer surface Condition: As Sawed and Cleaned
- Saw Mark Depth: £ 15 microns
- LifeTime: 2-8 microseconds
Impurities:
- Carbon: < 5 x 1016 atoms/c.c.
- Oxygen: < 1 x 1018 atoms/c.c.
Multicrystalline Silicon Solar Wafers:

Technical Specification:
Physical Characteristics :- Sizes:
- 125mm sq.
- 156mm sq.
- 165mm sq.
- Material: Multi Crystalline Silicon
- Technique of Ingot Formation: Casting by Heat Exchange Method
- Type: P Type due to Boron
- Resistivity: 0.5 to 5.0 Ohm-cm
- Wafering Technique: Wire Sawing
- Wafer Shape: Square
- Wafer Size: 125± 0.5mm x 125± 0.5 mm
- Wafer Corners: Shamffered
- Wafer Thickness: 325± 25 microns
- TTV: £ 40 microns
- BOW: £ 80 microns
- Wafer surface Condition: As Sawed and Cleaned
- Saw Mark Depth: £ 15 microns
- LifeTime: 2-8 microseconds
Impurities:
- Carbon: < 5 x 1016 atoms/c.c.
- Oxygen: < 1 x 1018 atoms/c.c.