Semiconductor Ingots
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A method for producing a single crystal semiconductor ingot is characterized in that a plurality of single crystal semiconductor ingots (2a) having a relatively small diameter that are required by prospective consumers are cut out of a single crystal semiconductor ingot (1a) having a relatively large diameter. This method has a secondary advantage in that even when the single crystal semiconductor ingot of large-diameter partially has a defect, some single crystal semiconductor ingots of small-diameter can be still cut out for use from the portion other than the region with the defect.
