SOI Wafers
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There are three major categories of SOI Wafers differentiated mainly by the thickness of the device layer.
At KEMI we are able to offer our customers thick film SOI in a device thickness range from several microns to hundreds of microns. The range of thermal oxide can also vary from fractions of a micron to less than 4 µm. The variation of this device layer using a bonded and backside ground wafer is +/- 0.5 µm at best. Applications include Power IC, LCD, Sensors, MEMS, Optical components & Radiation hardened devices.
For tighter tolerances than +/- 0.5 µm of device thicknesses we are developing our own proprietary " thin film" process with device layer variations at a fraction of that demonstrated from the traditional bonded wafer process.
For even thinner device layers measured in 100 to 300 nanometer range, we are the supplier of Simgui¹s SIMOX process which implants an oxide layer into a monosilicon wafer. This very thin device layer can be expanded by growing an additional epitaxial layer. Unlike the "thin film" process described above the oxide layer for the SIMOX process has a limitation of about 400 nanometer in thickness. Applications for this process include high speed logic, MPU¹s, and low power communications.
Because of the superior features of KEMI's BSOI wafers, the bulk behavior in etching is consistent and predictable.
KEMI supplies very thin SIMOX and thick film (bond and grind) wafers and has thin film.